Thermoelectric properties of Co, Ir, and Os-Doped FeSi Alloys: Evidence for Strong Electron-Phonon Coupling

Abstract

The effects of various transition metal dopants on the electrical and thermal transport properties of Fe1-xMxSi alloys (M= Co, Ir, Os) are reported. The maximum thermoelectric figure of merit ZTmax is improved from 0.007 at 60 K for pure FeSi to ZT = 0.08 at 100 K for 4% Ir doping. A comparison of the thermal conductivity data among Os, Ir and Co doped alloys indicates strong electron-phonon coupling in this compound. Because of this interaction, the common approximation of dividing the total thermal conductivity into independent electronic and lattice components (κTotal = κelectronic + κlattice) fails for these alloys. The effects of grain size on thermoelectric properties of Fe0.96Ir0.04Si alloys are also reported. The thermal conductivity can be lowered by about 50% with little or no effect on the electrical resistivity or Seebeck coefficient. This results in ZTmax = 0.125 at 100 K, still about a factor of five too low for solid-state refrigeration applications.

References in corpus (1)

• Electronic structure and properties of pure and doped $\epsilon$-FeSi from ab-initio local density theory

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