Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy

Abstract

We report resistance versus magnetic field measurements for a La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown by molecular-beam epitaxy, that show a large field window of extremely high tunneling magnetoresistance (TMR) at low temperature. Scanning the in-plane applied field orientation through 360^/circ, the TMR shows 4-fold symmetry, i.e. biaxial anisotropy, aligned with the crystalline axes but not the junction geometrical long axis. The TMR reaches ~ 1900% at 4K, corresponding to an interfacial spin polarization of > 95% assuming identical interfaces. These results show that uniaxial anisotropy is not necessary for large TMR, and lay the groundwork for future improvements in TMR in manganite junctions.

6 pages, 7 figures; accepted in Applied Physics Letters

References in corpus (5)

• Evidence of orbital reconstruction at interfaces in La0.67Sr0.33MnO3 films
• Nanoscale Suppression of Magnetization at Atomically Assembled Manganite Interfaces
• Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy
• Measuring magnetic profiles at manganite surfaces with monolayer resolution
• Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions

Cited by in corpus (6)

• Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy
• Optimal interface doping at La_2/3Sr_1/3MnO_3/SrTiO_3(001) heterojunctions for spintronic applications
• Alternation of Magnetic Anisotropy Accompanied by Metal-Insulator Transition in Strained Ultrathin Manganite Heterostructures
• Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy
• Interface combinatorial pulsed laser deposition to enhance heterostructures functional properties
• Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier