Transport properties of graphene quantum dots

Abstract

In this work we present a theoretical study of transport properties of a double crossbar junction composed by segments of graphene ribbons with different widths forming a graphene quantum dot structure. The systems are described by a single-band tight binding Hamiltonian and the Green's function formalism using real space renormalization techniques. We show calculations of the local density of states, linear conductance and I-V characteristics. Our results depict a resonant behavior of the conductance in the quantum dot structures which can be controlled by changing geometrical parameters such as the nanoribbon segments widths and relative distance between them. By applying a gate voltage on determined regions of the structure, it is possible to modulate the transport response of the systems. We show that negative differential resistance can be obtained for low values of gate and bias voltages applied.

9 pages, 9 figures, accepted to Phys. Rev. B

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• Fano resonances in hexagonal zigzag graphene rings under external magnetic flux
• Quasi-bound states and Fano effect in T-shaped graphene nanoribbons
• Strongly modulated transmissions in gapped armchair graphene nanoribbons with sidearm or on-site gate voltage
• Carbon Monosulfide Nanostructures: Chains Arrays, Monolayers, and Thin Films
• Electron Confinement Induced by Diluted Hydrogen-like Ad-atoms in Graphene Ribbons
• Klein Bound States in Single-Layer Graphene