Thermodynamic magnetization of two-dimensional electron gas measured over wide range of densities

Abstract

We report measurements of dm/dn in Si MOSFET, where m is the magnetization of the two-dimensional electron gas and n is its density. We extended the density range of measurements from well in the metallic to deep in the insulating region. The paper discusses in detail the conditions under which this extension is justified, as well as the corrections one should make to extract dm/dn properly. At low temperatures, dm/dn was found to be strongly nonlinear already in weak magnetic fields, on a scale much smaller than the characteristic scales, expected for interacting two-dimensional electron gas. Surprisingly, this nonlinear behavior exists both in the dielectric, and in the metallic region. These observations, we believe, provide evidence for strong coupling of the itinerant and localized electrons in Si-MOSFET.

5 pages, 3figures

References in corpus (1)

• Pauli spin susceptibility of a strongly correlated two-dimensional electron liquid

Cited by in corpus (5)

• Spin-Droplet State of an Interacting 2D Electron System
• Spin-Valley Coherent Phases of the $\nu =0$ Quantum Hall State in Bilayer Graphene
• Two-dimensional system of strongly interacting electrons in silicon (100) structures
• Magnetic-field-driven redistribution between extended and localized electronic states in high-mobility Si MOSFETs at low temperatures
• Phase Separation in Two-Dimensional Electron Systems: Experimental View