Thermodynamic magnetization of two-dimensional electron gas measured over wide range of densities

Abstract

We report measurements of dm/dn in Si MOSFET, where m is the magnetization of the two-dimensional electron gas and n is its density. We extended the density range of measurements from well in the metallic to deep in the insulating region. The paper discusses in detail the conditions under which this extension is justified, as well as the corrections one should make to extract dm/dn properly. At low temperatures, dm/dn was found to be strongly nonlinear already in weak magnetic fields, on a scale much smaller than the characteristic scales, expected for interacting two-dimensional electron gas. Surprisingly, this nonlinear behavior exists both in the dielectric, and in the metallic region. These observations, we believe, provide evidence for strong coupling of the itinerant and localized electrons in Si-MOSFET.

arXiv comment5 pages, 3figures

References in corpus (6)

• Magnetic Field Suppression of the Conducting Phase in Two Dimensions
• The low-density spin susceptibility and effective mass of mobile electrons in Si inversion layers
• Indication of the ferromagnetic instability in a dilute two-dimensional electron system
• Scaling of the magnetoconductivity of silicon MOSFET's: evidence for a quantum phase transition in two dimensions
• The thermodynamic spin magnetization of strongly correlated 2d electrons in a silicon inversion layer
• Pauli spin susceptibility of a strongly correlated two-dimensional electron liquid

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