Determination of the bandgap and split-off band of wurtzite GaAs

Abstract

GaAs nanowires with a 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of GaAs wurtzite below 1.523 eV.

References in corpus (6)

• Twinning superlattices in indium phosphide nanowires
• Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires
• Predicted band structures of III-V semiconductors in wurtzite phase
• Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects
• Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
• Magnetic states in prismatic core multishell nanowires

Cited by in corpus (5)

• Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon
• Electronic bands of III-V semiconductor polytypes and their alignment
• Luminescence of GaAs nanowires consisting of wurtzite and zincblende segments
• First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors
• High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire