Strain control of electron-phonon energy loss rate in many-valley semiconductors

Abstract

We demonstrate significant modification of the electron-phonon energy loss rate in a many-valley semiconductor system due to lattice mismatch induced strain. We show that the thermal conductance from the electron system to the phonon bath in strained n + Si, at phonon temperatures between 200 mK and 450 mK, is more than an order of magnitude lower than that for a similar unstrained sample.

References in corpus (3)

• Opportunities for mesoscopics in thermometry and refrigeration: Physics and applications
• Intervalley-Scattering Induced Electron-Phonon Energy Relaxation in Many-Valley Semiconductors at Low Temperatures
• Electron-Acoustic Phonon Energy Loss Rate in Multi-Component Electron Systems with Symmetric and Asymmetric Coupling Constants

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