Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity
arXiv:1101.4218 · doi:10.1063/1.3573824
Abstract
We report a technique for applying a dc voltage or current bias to the center conductor of a high-quality factor superconducting microwave cavity without significantly disturbing selected cavity modes. This is accomplished by incorporating dc bias lines into the cavity at specific locations. The measured S-matrix parameters of the system are in good agreement with theoretical predictions and simulations. We find that at 4 K the quality factor of the cavity degrades by less than 1% under the application of a dc bias.
arXiv commentSubmitted to Appl. Phys. Lett
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