Kane-Like Electrons in Type II/III Heterostructures versus Dirac-Like Electrons in Graphene

Abstract

The propagation of charge carriers in graphene is compared to that in type II/III heterostructures for which a two-band Kane model is appropriate. In particular, conditions for a quantitative analogy between these two cases are searched for, and found to be quite restrictive. The analysis in this paper shows that the essential property of graphene is not the spinor character of its wavefunction but the linear dispersion relation, which does not hold in finite-gap two-band Kane-type semiconductors. Therefore, Kane-like and Dirac-like charge carriers behave differently, except in zero-bandgap semiconductor superlattices.

to be published in Journal of Applied Physics

References in corpus (4)

• The electronic properties of graphene
• Chiral tunneling and the Klein paradox in graphene
• Engineering artificial graphene in a two-dimensional electron gas
• Making Massless Dirac Fermions from Patterned Two-Dimensional Electron Gases

Cited by in corpus (5)

• Effective Hamiltonian for electron waves in artificial graphene: A first principles derivation
• A Metamaterial-Inspired Model for Electron Waves in Bulk Semiconductors
• Time Flow in Graphene and Its Implications on the Cutoff Frequency of Ballistic Graphene Devices
• Giant nonlinearity in Zero-Gap Semiconductor Superlattices
• Berry Phase and Traversal Time in Asymmetric Graphene Structures