Numerical Study of Carrier Multiplication Pathways in Nanocrystalline and Bulk Form of PbSe

Abstract

Employing the interband exciton scattering model, we have performed a numerical study of the direct photogeneration and population relaxation processes contributing to carrier multiplication (CM) in nanocrystalline and bulk PbSe. We argue that in both cases the impact ionization is the main mechanisms of CM. This explains weak contribution of the direct photogeneration to the total quantum efficiency (QE). Investigated size scaling of QE in NCs and comparison to the bulk limit provide microscopic insight in the experimentally observed trends.

4 pages, 3 figures (revised version) Accepted for publication in Physical Review Letters

References in corpus (6)

• Carrier multiplication yields in PbS and PbSe nanocrystals measured by transient photoluminescence
• Carrier multiplication yields in CdSe and CdTe nanocrystals by transient photoluminescence
• Distribution of carrier multiplication rates in CdSe and InAs nanocrystals
• Theory of multiexciton generation in semiconductor nanocrystals
• Quantum simulation of multiple-exciton generation in a nanocrystal by a single photon
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Cited by in corpus (7)

• Numerical analysis of carrier multiplication mechanisms in nanocrystal and bulk forms of PbSe and PbS
• Multiple Exciton Generation in Chiral Carbon Nanotubes: Density Functional Theory Based Computation
• Biexciton generation rates in CdSe nanorods are length independent
• Singlet Fission in Chiral Carbon Nanotubes: Density Functional Theory Based Computation
• Coulomb matrix elements for the impact ionization process in nanocrystals: the envelope function approach
• Inter-band Coulomb coupling in narrow gap semiconductor nanocrystals: $\mathbf{k}\cdot \mathbf{p}$ theory
• Dynamics of dissipative multiple exciton generation in nanocrystals