High-energy long-lived resonance of electrons in fractal-like semiconductor heterostructures

Abstract

A fractal-like alignment of quantum wells is shown to accommodate resonant states with long lifetimes. For the parameters of the semiconductor heterostructure GaAs/Al${}_{0.4}$Ga${}_{0.6}$As with the well depth 300meV, a resonant state of the energy as high as 44meV with the lifetime as long as 2.8\{mu}s is shown to be achievable.

5 pages, 4 figures. Figures of better resolution are available upon request