Optical transitions and energy relaxation of hot carriers in Si nanocrystals

Abstract

Dynamics of hot carriers confined in Si nanocrystals is studied theoretically using atomistic tight binding approach. Radiative, Auger-like and phonon-assisted processes are considered. The Auger-like energy exchange between electrons and holes is found to be the fastest process in the system. However the energy relaxation of hot electron-hole pair is governed by the single optical phonon emission. For a considerable number of states in small nanocrystals single-phonon processes are ruled out by energy conservation law.

3 pages, 4 figures

References in corpus (6)

• Interband, intraband and excited-state direct photon absorption of silicon and germanium nanocrystals embedded in a wide band-gap lattice
• Single-particle states in spherical Si/SiO${}_2$ quantum dots
• Direct bandgap optical transitions in Si nanocrystals
• High Luminescence in Small Si/SiO2 Nanocrystals: A Theoretical Study
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• Optical transitions and energy relaxation of hot carriers in Si nanocrystals

Cited by in corpus (3)

• Theoretical analysis of electronic band structure of 2-to-3-nm Si nanocrystals
• Exciton-photon interactions in semiconductor nanocrystals: {radiative transitions, non-radiative processes,} and environment effects
• Optical transitions and energy relaxation of hot carriers in Si nanocrystals