Heat Conduction across Monolayer and Few-Layer Graphenes

Abstract

We report the thermal conductance G of Au/Ti/graphene/SiO2 interfaces (graphene layers 1 < n < 10) typical of graphene transistor contacts. We find G ~ 25 MW m-2 K-1 at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO2 interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO2 interfaces acting in series. The temperature dependence of G from 50 < T < 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings indicate that metal contacts can limit not only electrical transport, but also thermal dissipation from sub-micron graphene devices.

22 pages, 4 figures, accepted for publication in Nano Letters (2010) This paper has been withdrawn by the authors upon request by Nano Letters. The paper will be available in Nano Letters very soon

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• Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)
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• Thermal and Thermoelectric Transport in Nanostructures and Low-Dimensional Systems
• Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition
• Thermal conductivity of epitaxial graphene nanoribbons on SiC: effect of substrate
• Theoretical analysis of high-field transport in graphene on a substrate
• Tunable Band Structures of Polycrystalline Graphene by External and Mismatch Strains