Microwave response of a magnetic single-electron transistor
arXiv:1007.4966 · doi:10.1103/PhysRevB.82.180403
Abstract
We consider a single-electron transistor in the form of a ferromagnetic dot in contact with normal-metal and pinned ferromagnetic leads. Microwave-driven precession by the dot induces a pumped electric current. In open circuits, this pumping produces a measurable reverse bias voltage, which can be enhanced and made highly nonlinear by Coulomb blockade in the dot. The dependence of this bias on the power and spectrum of microwave irradiation may be utilized to develop nanoscale microwave detectors analogous to single-electron transistor-based electrostatic sensors and nanoelectromechanical devices.
5 pages, 4 figures
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Cited by in corpus (4)
- Theory of spin pumping through an interacting quantum dot tunnel coupled to a ferromagnet with time-dependent magnetization
- Dynamic Magnetoelectric Effect in Ferromagnet-Superconductor Tunnel Junctions
- Breaking of Coulomb blockade by macrospin-assisted tunneling
- Giant magnetoelectric effect in magnetic tunnel junctions coupled to an electromagnetic environment