Alternative approach to computing transport coefficients: application to conductivity and Hall coefficient of hydrogenated amorphous silicon

Abstract

We introduce a theoretical framework for computing transport coefficients for complex materials. As a first example, we resolve long-standing inconsistencies between experiment and theory pertaining to the conductivity and Hall mobility for amorphous silicon and show that the Hall sign anomaly is a consequence of localized states. Next, we compute the AC conductivity of amorphous polyanaline. The formalism is applicable to complex materials involving defects and band-tail states originating from static topological disorder and extended states. The method may be readily integrated with current \textit{ab initio} methods.

4 pages, 2 figures, submitted to Phys. Rev. Lett

References in corpus (2)

• Atomistic Origin of Urbach Tails in Amorphous Silicon
• Phonon driven transport in amorphous semiconductors: Transition probabilities

Cited by in corpus (3)

• The Microscopic Response Method: theory of transport for systems with both topological and thermal disorder
• Approximate Theory of Temperature Coefficient of Resistivity of Amorphous Semiconductors
• Radiation fields for nanoscale systems