Direct-write, focused ion beam-deposited,7 K superconducting C-Ga-O nanowire

Abstract

We have fabricated C-Ga-O nanowires by gallium focused ion beam-induced deposition from the carbon-based precursor phenanthrene. The electrical conductivity of the nanowires is weakly temperature dependent below 300 K, and indicates a transition to a superconducting state below Tc = 7 K. We have measured the temperature dependence of the upper critical field Hc2(T), and estimate a zero temperature critical field of 8.8 T. The Tc of this material is approximately 40% higher than that of any other direct write nanowire, such as those based on C-W-Ga, expanding the possibility of fabricating direct-write nanostructures that superconduct above liquid helium temperatures

arXiv commentAccepted for APL

References in corpus (5)

• Superconductivity in Ropes of Single-Walled Carbon Nanotubes
• High-Tc superconductivity in entirely end-bonded multi-walled carbon nanotubes
• Focused-ion-beam-induced deposition of superconducting nanowires
• Nanoscale superconducting properties of amorphous W-based deposits grown with focused-ion-beam
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Cited by in corpus (2)

• Focused electron beam induced deposition meets materials science
• Superconductivity in the system $\mathrm{M}{\mathrm{o}}_{\mathrm{x}}{\mathrm{C}}_{\mathrm{y}}\mathrm{G}{\mathrm{a}}_{\mathrm{z}}{\mathrm{O}}_{\delta }$ prepared by focused ion beam induced deposition