Dynamics of Charge Leakage From Self-assembled CdTe Quantum Dots

Abstract

We study the leakage dynamics of charge stored in an ensemble of CdTe quantum dots embedded in a field-effect structure. Optically excited electrons are stored and read out by a proper time sequence of bias pulses. We monitor the dynamics of electron loss and find that the rate of the leakage is strongly dependent on time, which we attribute to an optically generated electric field related to the stored charge. A rate equation model quantitatively reproduces the results.

4 pages, submitted to Applied Physics Letters

References in corpus (7)

• Observation of extremely slow hole spin relaxation in self-assembled quantum dots
• Optical manipulation of a single Mn spin in a CdTe-based quantum dot
• Optical spin orientation of a single manganese atom in a quantum dot
• Excitation mechanisms of individual CdTe/ZnTe quantum dots studied by photon correlation spectroscopy
• Single Electron Transport in electrically tunable nanomagnets
• A Charge and Spin Readout Scheme For Single Self-Assembled Quantum Dots
• Selective Optical Charge Generation, Storage and Readout in a Single Self Assembled Quantum Dot