Selective Optical Charge Generation, Storage and Readout in a Single Self Assembled Quantum Dot

Abstract

We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable optical readout of the charge occupancy using a time gated photoluminescence technique. This device enables us to directly investigate the electric field dependent tunneling escape dynamics of electrons at high electric fields over timescales up to 4 us. The results demonstrate that such structures and measurement techniques can be used to investigate charge and spin dynamics in single quantum dots over microsecond timescales.

Accepted for publication in APL

References in corpus (7)

• Spins in few-electron quantum dots
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• Few-Electron Quantum Dot Circuit with Integrated Charge Read-Out
• Observation of Faraday rotation from a single confined spin
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• Controlled tunneling induced dephasing of Rabi rotations for ultra-high fidelity hole spin initialization
• Electro-optic polarization tuning of microcavities with a single quantum dot
• Coplanar stripline antenna design for optically detected magnetic resonance on semiconductor quantum dots
• Dynamics of Charge Leakage From Self-assembled CdTe Quantum Dots