Macroscopic quantum state in a semiconductor device
arXiv:1003.3162 · doi:10.1016/j.ssc.2010.08.002
Abstract
We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET. A chain of triple quantum dot molecules created by gate structure realizes a spin-half Heisenberg chain with spin-spin interactions alternating between ferromagnetic and anti-ferromagnetic. The quantum state is a semiconductor implementation of an integer spin-one antiferromagnetic Heisenberg chain with a unique correlated ground state and a finite energy gap, originally conjectured by Haldane.
12 pages, 4 figures
References in corpus (6)
- Driven coherent oscillations of a single electron spin in a quantum dot
- Stability Diagram of a Few-Electron Triple Dot
- Spectral Function for the S=1 Heisenberg Antiferromagetic Chain
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Cited by in corpus (7)
- Quantum circuits based on coded qubits encoded in chirality of electron spin complexes in triple quantum dots
- Theory of electronic properties and quantum spin blockade in a gated linear triple quantum dot with one electron spin each
- Greenberger-Horne-Zeilinger States in Quantum Dot Molecule
- Spin-1 Haldane chains of superconductor-semiconductor hybrids
- Dynamic crystallization in a quantum Ising chain
- Two qubit gate with macroscopic singlet-triplet qubits in synthetic spin-one chains in InAsP quantum dot nanowires
- Negative exchange interaction in Si quantum dot arrays via valley-phase induced gauge field