Reduction of high reset currents in unipolar resistance switching Pt/SrTiOx/Pt capacitors using acceptor doping

Abstract

The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease of Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching.

14 pages, 3 figures

References in corpus (4)

• Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution
• Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film
• Scaling behaviors of RESET voltages and currents in unipolar resistance switching
• Large 1/f noise of unipolar resistance switching and its percolating nature

Cited by in corpus (1)

• Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiter