Mechanisms of doping graphene

Abstract

We distinguish three mechanisms of doping graphene. Density functional theory is used to show that electronegative molecule like F4-TCNQ and electropositive metals like K dope graphene p- and n-type respectively. These dopants are expected to lead to a decrease in carrier mobility arising from Coulomb scattering but without any hysteresis effects. Secondly, a novel doping mechanism is exhibited by Au which dopes bilayer graphene but not single layer. Thirdly, electrochemical doping is effected by redox reactions and can result in p-doping by humid atmospheres and n-doping by NH3 and toluene.

submitted to Physica Status Solidi

References in corpus (4)

• Detection of Individual Gas Molecules Absorbed on Graphene
• Band structure engineering of epitaxial graphene on SiC by molecular doping
• First-principles studies of water adsorption on graphene: The role of the substrate
• Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping

Cited by in corpus (3)

• Electrically Controlled Adsorption of Oxygen in Bilayer Graphene Devices
• Atmospheric doping effects in epitaxial graphene: correlation of local and global electrical measurements
• Local Electrical Stress-Induced Doping and Formation of 2D Monolayer Graphene P-N Junction