Position dependent photodetector from large area reduced graphene oxide thin films

Abstract

We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases, decreases or remain almost zero depending upon the position of the laser spot with respect to the electrodes. The position sensitive photoresponse is explained by Schottky barrier modulation at the RGO film-electrode interface. The time response of the photocurrent is dramatically slower than single sheet of graphene possibly due to disorder from the chemically synthesis and interconnecting sheets.

References in corpus (3)

• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Ultrafast graphene photodetector

Cited by in corpus (5)

• Graphene oxide: new opportunities for optoelectronic, electronic and photonic chips
• Graphene oxide films for ultra-flat optics and linear and nonlinear integrated photonic circuits
• Efros-Shklovskii variable range hopping in reduced graphene oxide sheets of varying carbon sp2 fraction
• Coulomb Blockade and Hopping Conduction in Graphene Quantum Dots Array
• A nearly relaxation-free opto-electronic memory from ultra-thin graphene-MoS${}_2$ binary hybrids