Diameter-dependent conductance of InAs nanowires

Abstract

Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. Contacting multiple sections of each wire, we can study the diameter dependence within individual wires without the need to compare different nanowire batches. At room temperature we find a diameter-independent conductivity for diameters larger than 40 nm, indicative of three-dimensional diffusive transport. For smaller diameters, the resistance increases considerably, in coincidence with a strong suppression of the mobility. From an analysis of the effective charge carrier density, we find indications for a surface accumulation layer.

9 pages, 5 figures

References in corpus (3)

• Supercurrent reversal in quantum dots
• Diameter-Dependent Electron Mobility of InAs Nanowires
• Gate capacitance of back-gated nanowire field-effect transistors

Cited by in corpus (9)

• Conductance Quantization at zero magnetic field in InSb nanowires
• Mobility Enhancement by Sb-mediated Minimisation of Stacking Fault Density in InAs Nanowires Grown on Silicon
• Persistent enhancement of the carrier density in electron irradiated InAs nanowires
• Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
• Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
• Shiba Bound States across the mobility edge in doped InAs nanowires
• Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation
• Investigations of local electronic transport in InAs nanowires by scanning gate microscopy at helium temperatures
• Roughness scattering induced insulator-metal-insulator transition in a quantum wire