Electric field modulation of topological order in thin film semiconductors
arXiv:0911.1400 · doi:10.1103/PhysRevB.81.115322
Abstract
We propose a method that can consecutively modulate the topological orders or the number of helical edge states in ultrathin film semiconductors without a magnetic field. By applying a staggered periodic potential, the system undergoes a transition from a topological trivial insulating state into a non-trivial one with helical edge states emerging in the band gap. Further study demonstrates that the number of helical edge state can be modulated by the amplitude and the geometry of the electric potential in a step-wise fashion, which is analogous to tuning the integer quantum Hall conductance by a megntic field. We address the feasibility of experimental measurement of this topological transition.
4 pages, 4 figures
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- Microscopic origin of scalar potential induced topological transition in massive Dirac fermions and scalar Hall effect