Single grain heating due to inelastic cotunneling

Abstract

We study heating effects of a single metallic quantum dot weakly coupled to two leads. The dominant mechanism for heating at low temperatures is due to inelastic electron cotunneling processes. We calculate the grain temperature profile as a function of grain parameters, bias voltage, and time and show that for nanoscale size grains the heating effects are pronounced and easily measurable in experiments.

4 pages, 3 figures, revtex4, extended and corrected version

References in corpus (3)

• Heat Transistor: Demonstration of Gate-Controlled Electron Refrigeration
• Thermal transport in a granular metal array
• Thermoelectric performance of weakly coupled granular materials

Cited by in corpus (8)

• Fully Overheated Single-Electron Transistor
• Impact of capacitance and tunneling asymmetries on Coulomb blockade edges and Kondo peaks in non-equilibrium transport through molecular quantum dots
• Relaxation dynamics of the electron distribution in the Coulomb blockade problem
• Heating Effects in a Chain of Quantum Dots
• Giant Quantum Freezing of Tunnel Junctions mediated by Environments
• Universality and quantization of the power to heat ratio in nano-granular systems
• Statistics of energy dissipation in a quantum dot operating in the cotunneling regime
• Interplay of charge and heat transport in a nano-junction in the out-of-equilibrium cotunneling regime