Charge carrier injection into insulating media: single-particle versus mean-field approach
arXiv:0910.4127 · doi:10.1103/PhysRevB.81.125310
Abstract
Self-consistent, mean-field description of charge injection into a dielectric medium is modified to account for discreteness of charge carriers. The improved scheme includes both the Schottky barrier lowering due to the individual image charge and the barrier change due to the field penetration into the injecting electrode that ensures validity of the model at both high and low injection rates including the barrier dominated and the space-charge dominated regimes. Comparison of the theory with experiment on an unipolar ITO/PPV/Au-device is presented.
32 pages, 9 figures; revised version accepted to PRB
References in corpus (5)
- Space Charge Limited Transport and Time of Flight Measurements in Tetracene Single Crystals: a Comparative Study
- Self-consistent analytical solution of a problem of charge-carrier injection at a conductor/insulator interface
- Self-consistent analisys of the contact phenomena in low-mobility semiconductors
- Self consistent theory of unipolar charge-carrier injection in metal/insulator/metal systems
- Bipolar charge-carrier injection in semiconductor/insulator/conductor heterostructures: self-consistent consideration
Cited by in corpus (3)
- On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors
- Overall current-voltage characteristics of space charge controlled currents for thin films by a single carrier species
- Self-consistent model of unipolar transport in organic semiconductor diodes: accounting for a realistic density-of-states distribution