Self consistent theory of unipolar charge-carrier injection in metal/insulator/metal systems

Abstract

A consistent device model to describe current-voltage characteristics of metal/insulator/metal systems is developed. In this model the insulator and the metal electrodes are described within the same theoretical framework by using density of states distributions. This approach leads to differential equations for the electric field which have to be solved in a self consistent manner by considering the continuity of the electric displacement and the electrochemical potential in the complete system. The model is capable of describing the current-voltage characteristics of the metal/insulator/metal system in forward and reverse bias for arbitrary values of the metal/ insulator injection barriers. In the case of high injection barriers, approximations are provided offering a tool for comparison with experiments. Numerical calculations are performed exemplary using a simplified model of an organic semiconductor.

21 pages, 8 figures

References in corpus (2)

• Self-consistent analisys of the contact phenomena in low-mobility semiconductors
• Roughness-induced energetic disorder at the metal/organic interface

Cited by in corpus (4)

• Self-consistent analytical solution of a problem of charge-carrier injection at a conductor/insulator interface
• Charge carrier injection into insulating media: single-particle versus mean-field approach
• Bipolar charge-carrier injection in semiconductor/insulator/conductor heterostructures: self-consistent consideration
• Self-consistent model of unipolar transport in organic semiconductor diodes: accounting for a realistic density-of-states distribution