Search for EC and ECEC processes in Sn
arXiv:0909.1177 · doi:10.1103/PhysRevC.80.035501
Abstract
Limits on EC (here EC denotes electron capture) and ECEC processes in Sn have been obtained using a 380 cm HPGe detector and an external source consisting of 53.355 g enriched tin (94.32% of Sn). A limit with 90% C.L. on the Sn half-life of y for the ECEC(0) transition to the excited state in Cd (1871.0 keV) has been established. This transition is discussed in the context of a possible enhancement of the decay rate by several orders of magnitude given that the ECEC process is nearly degenerate with an excited state in the daughter nuclide. Prospects for investigating such a process in future experiments are discussed. The limits on other EC and ECEC processes in Sn were obtained on the level of y at the 90% C.L.
14 pages, 4 figures
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