Formation of p-n junction in polymer electrolyte-top gated bilayer graphene transistor

Abstract

We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the gate capacitance is measured to be 1.5 $\mu F/c{m}^2$, a value about 125 times higher than the conventional SiO${}_2$ back gate capacitance. Unlike the single layer graphene, the drain-source current does not saturate on varying the drain-source bias voltage. The energy gap opened between the valence and conduction bands using top and back gate geometry is estimated.

16 pages, 6 figures

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Gate-induced insulating state in bilayer graphene devices
• A self-consistent theory for graphene transport