Universal Thermoelectric Effect of Dirac Fermions in Graphene

Abstract

We numerically study the thermoelectric transports of Dirac fermions in graphene in the presence of a strong magnetic field and disorder. We find that the thermoelectric transport coefficients demonstrate universal behavior depending on the ratio between the temperature and the width of the disorder-broadened Landau levels(LLs). The transverse thermoelectric conductivity ${\alpha }_{xy}$ reaches a universal quantum value at the center of each LL in the high temperature regime, and it has a linear temperature dependence at low temperatures. The calculated Nernst signal has a peak at the central LL with heights of the order of $k_B/e$, and changes sign near other LLs, while the thermopower has an opposite behavior, in good agreement with experimental data. The validity of the generalized Mott relation between the thermoelectric and electrical transport coefficients is verified in a wide range of temperatures.

4 pages, 4 figures, published version

References in corpus (6)

• The electronic properties of graphene
• Unconventional Integer Quantum Hall effect in graphene
• A self-consistent theory for graphene transport
• Thermoelectric and Magnetothermoelectric Transport Measurements of Graphene
• The thermopower and Nernst Effect in graphene in a magnetic field
• Quantum Hall Effect of Dirac Fermions in Graphene: Disorder Effect and Phase Diagram

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