Field Localization and Enhancement of Phase Locked Second and Third Harmonic Generation in Absorbing Semiconductor Cavities

Abstract

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650nm and 433nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics become localized inside the cavity leading to relatively large conversion efficiencies. Field localization plays a pivotal role and ushers in a new class of semiconductor-based devices in the visible and UV ranges.

References in corpus (2)

• On the Inhibition of Linear Absorption in Opaque Materials Using Phase-Locked Harmonic Generation
• Anomalous Momentum States, Non-Specular Reflections, and Negative Refraction of Phase-Locked, Second Harmonic Pulses

Cited by in corpus (8)

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• Third Harmonic Generation at 223nm in the Metallic Regime of GaP
• Enhanced second harmonic generation from resonant GaAs gratings
• Resonant, broadband and highly efficient optical frequency conversion in semiconductor nanowire gratings at visible and UV wavelengths
• Harmonic generation and energy transport in dielectric and semiconductors at visible and UV wavelengths: the case of GaP
• Generation Efficiency of the Second Harmonic Inhomogeneous Component
• Retrieving linear and nonlinear optical dispersions of matter: combined experiment-numerical ellipsometry in Silicon, Gold and Indium Tin Oxide
• Second and Third harmonic generation in the opaque region of GaAs