Third Harmonic Generation at 223nm in the Metallic Regime of GaP
arXiv:1011.0627 · doi:10.1063/1.3565240
Abstract
We demonstrate second and third harmonic generation from a GaP substrate 500μm thick. The second harmonic field is tuned at the absorption resonance at 335nm, and the third harmonic signal is tuned at 223nm, in a range where the dielectric function is negative. These results show that a phase locking mechanism that triggers transparency at the harmonic wavelengths persists regardless of the dispersive properties of the medium, and that the fields propagate hundreds of microns without being absorbed even when the harmonics are tuned to portions of the spectrum that display metallic behavior.
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- Harmonic generation and energy transport in dielectric and semiconductors at visible and UV wavelengths: the case of GaP
- Second Harmonic Generation in Deeply Sub-Wavelength Waveguides
- Retrieving linear and nonlinear optical dispersions of matter: combined experiment-numerical ellipsometry in Silicon, Gold and Indium Tin Oxide
- Second and Third harmonic generation in the opaque region of GaAs