Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin Force Microscopy

Abstract

We use Kelvin Force Microscopy (KFM) to study the electrostatic properties of single-walled Carbon Nanotube Field Effect Transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete phenomenological determination of the averaging effects associated with the KFM probe side capacitances, and thus, to obtain KFM measurements with quantitative character. The value of the electrostatic lever arm of the CNTFET is determined from KFM measurements, and found in agreement with transport measurements based on Coulomb blockade.

arXiv comment13 pages, 4 figures, article published in Applied Physics Letters

References in corpus (4)

• Scanned Probe Microscopy of Electronic Transport in Carbon Nanotubes
• Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors
• Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes
• Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies

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• Physical Study by Surface Characterizations of Sarin Sensor on the Basis of Chemically Functionalized Silicon Nanoribbon Field Effect Transistor
• Kelvin probe characterization of buried graphitic microchannels in single-crystal diamond