Magnetic and transport properties of n-type Fe-doped In2O3 ferromagnetic thin films

Abstract

Room temperature ferromagnetism was observed in n-type Fe-doped In2O3 thin films deposited on c-cut sapphire substrates by pulsed laser deposition. Structure, magnetism, composition, and transport studies indicated that Fe occupied the In sites of the In2O3 lattice rather than formed any metallic Fe or other magnetic impurity phases. Magnetic moments of films were proved to be intrinsic and showed to have a strong dependence on the carrier densities which depended on the Fe concentration and its valance state as well as oxygen pressure.

Accepted in Applied Physics Letters

References in corpus (3)

• Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator
• The structural and magnetic properties of (In1-xFex)2O3 (0.0 <= x <= 0.25) system : prepared by gel combustion method
• Electronic structure of nanoscale iron oxide particles measured by scanning tunneling and photoelectron spectroscopies

Cited by in corpus (3)

• Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In${}_{1-x}$Fe${}_x$)${}_2$O${}_3$
• Grain boundary ferromagnetism in vanadium-doped In${}_2$O${}_3$ thin films
• On Using Magnetic and optical methods to determine the size and characteristics of nanoparticles embedded in oxide semiconductors