activity
19952014
most citedTwo magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator

336 citations · 597 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2014★ 114 cited

Electrical manipulation of orbital occupancy and magnetic anisotropy in manganites

Bin Cui, Cheng Song, Gillian A. Gehring +7

Electrical manipulation of lattice, charge, and spin has been realized respectively by the piezoelectric effect, field-effect transistor, and electric field control of ferromagneti…

cond-mat.str-el2013

The Mn-O bonds dependence of the lattice distortion in LaMnO3

Mahrous r Ahmed, A. M. Ahmed, A. K. Diab +2

We have investigated the volume collapse occurring in LaMnO3 unit cell using the anisotropic Potts model modified by two types of anisotropic interactions which has been used to st…

cond-mat.mtrl-sci2013

Contrasting behavior of the structural and magnetic properties in Mn- and Fe-doped InO films

Qi Feng, Harry J Blythe, A Mark Fox +4

We have observed room temperature ferromagnetism (FM) in InO thin films doped with either 5 at.% Mn or Fe, prepared by pulsed laser deposition (PLD) at substrate temperatur…

cond-mat.mtrl-sci2009★ 56 cited

Magnetic and transport properties of n-type Fe-doped In2O3 ferromagnetic thin films

Xiao-Hong Xu, Feng-Xian Jiang, Jun Zhang +3

Room temperature ferromagnetism was observed in n-type Fe-doped In2O3 thin films deposited on c-cut sapphire substrates by pulsed laser deposition. Structure, magnetism, compositio…

cond-mat.mtrl-sci2007★ 336 cited

Two magnetic regimes in doped ZnO corresponding to a dilute magnetic semiconductor and a dilute magnetic insulator

A. J. Behan, A. Mokhtari, H. J. Blythe +5

Films of ZnO doped with magnetic ions, Mn and Co and, in some cases, with Al have been fabricated with a very wide range of carrier densities. Ferromagnetic behaviour is observed i…

cond-mat.mtrl-sci2006★ 19 cited

Magnetic order and valency at LaSrMnO/SrTiO interfaces

H. Zenia, G. A. Gehring, W. M. Temmerman

We report on first principles calculations of the electronic structure of LaSrMnO/SrTiO junction with two possible types of interface terminations. We f…