Local Interlayer Tunneling Between Two-Dimensional Electron Systems in the Ballistic Regime
arXiv:0905.1138 · doi:10.1103/PhysRevB.82.235317
Abstract
We study a theoretical model of virtual scanning tunneling microscopy (VSTM), a proposed application of interlayer tunneling in a bilayer system to locally probe a two-dimensional electron system (2DES) in a semiconductor heterostructure. We consider tunneling for the case where transport in the 2DESs is ballistic, and show that the zero-bias anomaly is suppressed by extremely efficient screening. Since such an anomaly would complicate the interpretation of data from a VSTM, this result is encouraging for efforts to implement such a microscopy technique.
4 pages, 2 figures
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