Resonant inelastic x-ray scattering study of the electronic structure of Cu${}_2$O

Abstract

A resonant inelastic x-ray scattering study of the electronic structure of the semiconductor cuprous oxide, $\mathrm{C}{\mathrm{u}}_2\mathrm{O}$, is reported. When the incident x-ray energy is tuned to the Cu K-absorption edge, large enhancements of the spectral features corresponding to the electronic transitions between the valence band and the conduction band are observed. A feature at 6.5 eV can be well described by an interband transition from occupied states of mostly Cu 3d charactor to unoccupied states with mixed 3d, 4s and 2p character. In addition, an insulating band gap is observed, and the momentum dependence of the lower bound is measured along the $\Gamma -R$ direction. This is found to be in good agreement with the valence band dispersion measured with angle-resolved photoemission spectroscopy.

7 pages, 6 figures

References in corpus (7)

• Electronic Structure of Mott Insulators Studied by Inelastic X-ray Scattering
• Resonant inelastic x-ray scattering study of charge excitations in La2CuO4
• Momentum Dependence of Charge Excitations in the Electron-Doped Superconductor Nd1.85Ce0.15CuO4: a RIXS Study
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Cited by in corpus (3)

• Resonant Inelastic X-ray Scattering Studies of Elementary Excitations
• Crossover from itinerant to localized magnetic excitations through the metal-insulator transition in NaOsO${}_{\text{3}}$
• Electronic Structure of Doped Lanthanum Cuprates Studied with Resonant Inelastic X-Ray Scattering