Electrostatically actuated silicon-based nanomechanical switch at room temperature
arXiv:0903.2491 · doi:10.1063/1.2964196
Abstract
We demonstrate a silicon-based high frequency nanomechanical device capable of switching controllably between two states at room temperature. The device uses a nanomechanical resonator with two distinct states in the hysteretic nonlinear regime. In contrast to prior work, we demonstrate room temperature electrostatic actuation and sensing of the switching device with 100% fidelity by phase modulating the drive signal. This phase-modulated device can be used as a low-power high-speed mechanical switch integrated on-chip with silicon circuitry.
10 pages, 3 figures. Related papers can be found at http://nano.bu.edu/