Nearly Perfect Single-Channel Conduction in Disordered Armchair Nanoribbons
arXiv:0902.1234 · doi:10.1103/PhysRevB.79.125421
Abstract
The low-energy spectrum of graphene nanoribbons with armchair edges (armchair nanoribbons) is described as the superposition of two non-equivalent Dirac points of graphene. In spite of the lack of well-separated two valley structures, the single-channel transport subjected to long-ranged impurities is nearly perfectly conducting, where the backward scattering matrix elements in the lowest order vanish as a manifestation of internal phase structures of the wavefunction. For multi-channel energy regime, however, the conventional exponential decay of the averaged conductance occurs. Since the inter-valley scattering is not completely absent, armchair nanoribbons can be classified into orthogonal universality class irrespective of the range of impurities. The nearly perfect single-channel conduction dominates the low-energy electronic transport in rather narrow nanorribbons.
5 pages, 3 figures, accepted for publication in PRB
References in corpus (8)
- Electric Field Effect in Atomically Thin Carbon Films
- Energy Band Gap Engineering of Graphene Nanoribbons
- Energy Gaps in Graphene Nanoribbons
- Electronic States of Graphene Nanoribbons
- Conductance quantization and transport gap in disordered graphene nanoribbons
- Quantum conductance of graphene nanoribbons with edge defects
- Perfectly Conducting Channel and Universality Crossover in Disordered Nano-Graphene Ribbons
- Edge Effect on Electronic Transport Properties of Graphene Nanoribbons and Presence of Perfectly Conducting Channel
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