Tuning the electronic structure of graphene by ion irradiation
arXiv:0901.3021 · doi:10.1103/PhysRevB.78.233407
Abstract
Mechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The irradiated samples were investigated by scanning tunneling microscopy and spectroscopy measurements, which reveal that defect sites, besides acting as scattering centers for electrons through local modification of the on-site potential, also induce disorder in the hopping amplitudes. The most important consequence of the induced disorder is the substantial reduction in the Fermi velocity, revealed by bias-dependent imaging of electron-density oscillations observed near defect sites.
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- The Electronic States of a Double Carbon Vacancy Defect in Pyrene: A Model Study for Graphene
- Application of sodium-ion-based solid electrolyte in electrostatic tuning of carrier density in graphene
- Transport in graphene nanostructures with spatially modulated gap and potential
- Unzipping graphene: Extendend defects by ion irradiation