Spin states in InAs/AlSb/GaSb semiconductor quantum wells

Abstract

We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those obtained by the single-band Rashba model due to the electron-hole hybridization. The Rashba spin-splitting of the lowest conduction subband shows an oscillating behavior. The D'yakonov-Perel' spin relaxation time shows several peaks with increasing the Fermi wavevector. By inserting an AlSb barrier between the InAs and GaSb layers, the hybridization can be greatly reduced. Consequently, the spin orientation, the spin splitting, and the D'yakonov-Perel' spin relaxation time can be tuned significantly by changing the thickness of the AlSb barrier.

11 pages, 9 figures

References in corpus (5)

• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• An Exact SU(2) Symmetry and Persistent Spin Helix in a Spin-Orbit Coupled System
• Emergence of the persistent spin helix in semiconductor quantum wells
• Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells
• Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells

Cited by in corpus (1)

• D'yakonov-Perel' spin relaxation in InSb/AlInSb quantum wells