All-graphene integrated circuits via strain engineering
arXiv:0810.4539 · doi:10.1103/PhysRevLett.103.046801
Abstract
We propose a route to all-graphene integrated electronic devices by exploring the influence of strain on the electronic structure of graphene. We show that strain can be easily tailored to generate electron beam collimation, 1D channels, surface states and confinement, the basic elements for all-graphene electronics. In addition this proposal has the advantage that patterning can be made on substrates rather than on the graphene sheet, thereby protecting the integrity of the latter.
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References in corpus (10)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Chaotic Dirac billiard in graphene quantum dots
- A tight-binding approach to uniaxial strain in graphene
- Magnetic confinement of massless Dirac fermions in graphene
- Conductance quantization and transport gap in disordered graphene nanoribbons
- Coulomb blockade in graphene nanoribbons
- Multiple magnetic barriers in graphene
- Pseudomagnetic fields and ballistic transport in a suspended graphene sheet