Kondo effects in a C_60 single-molecule transistor

Abstract

We have used the electromigration technique to fabricate a ${\mathrm{C}}_{60}$ single-molecule transistor (SMT). We present a full experimental study as a function of temperature, down to 35 mK, and as a function of magnetic field up to 8 T in a SMT with odd number of electrons, where the usual spin-1/2 Kondo effect occurs, with good agreement with theory. In the case of even number of electrons, a low temperature magneto-transport study is provided, which demonstrates a Zeeman splitting of the zero-bias anomaly at energies well below the Kondo scale.

4 pages, 3 figures

References in corpus (5)

• The Kondo effect in C${}_{60}$ single-molecule transistors
• Quantum phase transition in a single-molecule quantum dot
• Tuning the Kondo effect with a mechanically controllable break junction
• Theory for transport through a single magnetic molecule: Endohedral N@C60
• Feedback controlled electromigration in four-terminal nano-junctions