Evolution of electronic structure of doped Mott insulators - reconstruction of poles and zeros of Green's function

Abstract

We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the Green function G), interference of the zero surfaces of G with the pole surfaces becomes crucial in the doped Mott insulators. Mutually interfering pole and zero surfaces are dramatically transferred over the Mott gap, when lightly doped holes synergetically loosen the doublon-holon binding. The heart of the Mott physics such as the pseudogap, hole pockets, Fermi arcs, in-gap states, and Lifshitz transitions appears as natural consequences of this global interference in the frequency space.

4 pages, 4 figures

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Cited by in corpus (4)

• Lattice symmetry breaking in cuprate superconductors: Stripes, nematics, and superconductivity
• Pseudogap opening and formation of Fermi arcs as an orbital-selective Mott transition in momentum space
• Two-stage metal-insulator transition in the 2D Hubbard model: momentum selectivity in the 8-site dynamical cluster approximation
• The doping-driven evolution of the superconducting state of a doped Mott insulator: a key for the high temperature superconductivity