Coulomb oscillations in three-layer graphene nanostructures

Abstract

We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain contacts. Three lateral graphene gates are used to electrostatically tune the device. An individual three-layer graphene constriction has been investigated separately showing a transport gap near the charge neutrality point. The graphene tunneling barriers show a strongly nonmonotonic coupling as function of gate voltage indicating the presence of localized states in the constrictions. We show Coulomb oscillations and Coulomb diamond measurements proving the functionality of the graphene SET. A charging energy of $\approx 0.6$ meV is extracted.

10 pages, 6 figures

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• Stacking Order dependent Electric Field tuning of the Band Gap in Graphene Multilayers
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• Parity and valley degeneracy in multilayer graphene
• Landau level spectra and the quantum Hall effect of multilayer graphene
• Gate-induced Dirac cones in multilayer graphenes
• Electronic triple-dot transport through a bilayer graphene island with ultrasmall constrictions
• Intrinsic and substrate induced spin-orbit interaction in chirally stacked trilayer graphene