Contribution of drifting carriers to the Casimir-Lifshitz and Casimir-Polder interactions with semiconductor materials
arXiv:0805.1676 · doi:10.1103/PhysRevLett.101.163203
Abstract
We develop a new theory for Casimir-Lifshitz and Casimir-Polder interactions with semiconductor surfaces that takes into account charge drift in the bulk material. The corresponding frequency-dependent dispersion relations describe a crossover between Lifshitz results for dielectrics and for good conductors. In the quasi-static limit, our calculated reflection amplitudes coincide with those recently computed to account for Debye screening in the thermal Lifshitz force with conducting surfaces with small density of carriers.
arXiv comment4 pages version 2: improved discussion of perfect conductor and perfect dielectric limits. Version 3; includes discussion of limits of applicability of the analysis. Version $; updated references
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