Contribution of drifting carriers to the Casimir-Lifshitz and Casimir-Polder interactions with semiconductor materials

Abstract

We develop a new theory for Casimir-Lifshitz and Casimir-Polder interactions with semiconductor surfaces that takes into account charge drift in the bulk material. The corresponding frequency-dependent dispersion relations describe a crossover between Lifshitz results for dielectrics and for good conductors. In the quasi-static limit, our calculated reflection amplitudes coincide with those recently computed to account for Debye screening in the thermal Lifshitz force with conducting surfaces with small density of carriers.

4 pages version 2: improved discussion of perfect conductor and perfect dielectric limits. Version 3; includes discussion of limits of applicability of the analysis. Version $; updated references

References in corpus (4)

• Measurement of the Temperature Dependence of the Casimir-Polder Force
• Thermal Lifshitz Force between Atom and Conductor with Small Density of Carriers
• Conductivity of dielectric and thermal atom-wall interaction
• Casimir energy and entropy between dissipative mirrors

Cited by in corpus (11)

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• Casimir entropy for magnetodielectrics
• Possibility to measure thermal effects in the Casimir force
• Current status of the problem of thermal Casimir force
• Casimir experiments showing saturation effects
• Apparatus to probe the influence on the Casimir effect of the Mott-Anderson metal-insulator transition in doped semiconductors
• Normal and lateral Casimir force: Advances and prospects
• Saturation effects in experiments on the thermal Casimir effect
• Atom-surface interaction induced by quenched monopolar charge disorder