Ground-state of graphene in the presence of random charged impurities
arXiv:0803.0963 · doi:10.1103/PhysRevLett.101.166803
Abstract
We calculate the carrier density dependent ground state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects non-perturbatively on an equal footing in a self-consistent theoretical formalism. We provide detailed quantitative results on the dependence of the disorder-induced spatially inhomogeneous two-dimensional carrier density distribution on the external gate bias, the impurity density, and the impurity location. We find that the interplay between disorder and interaction is strong, particularly at lower impurity densities. We show that for the currently available typical graphene samples, inhomogeneity dominates graphene physics at low ( cm) carrier density with the density fluctuations becoming larger than the average density.
Final version, accepted for publication in Phys. Rev. Lett
References in corpus (15)
- Electric Field Effect in Atomically Thin Carbon Films
- A self-consistent theory for graphene transport
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Quantum critical transport in clean graphene
- The Coulomb impurity problem in graphene
- Vacuum Polarization and Screening of Supercritical Impurities in Graphene
- Topological delocalization of two-dimensional massless Dirac fermions
- Chirality and Correlations in Graphene
- Screening of a hypercritical charge in graphene
- Density-Functional Theory of Graphene Sheets
- Screening of Coulomb Impurities in Graphene
- Density dependent exchange contribution to in extrinsic graphene
- Coulomb impurity in graphene
- Transport in suspended graphene
- Exchange induced charge inhomogeneities in rippled neutral graphene