Quantitative analysis of electronic transport through weakly-coupled metal/organic interfaces

Abstract

Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced quantitatively in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emphasizes the role of the coupling between metal and molecules, which in our devices is weak due to the presence of an oxide layer at the surface of the copper electrodes.

4 pages, 3 figures

References in corpus (5)

• Organic Single-Crystal Field-Effect Transistors
• Field-Effect Transistors on Tetracene Single Crystals
• Dipole formation at metal/PTCDA interfaces: Role of the Charge Neutrality Level
• Reproducible Low Contact Resistance in Rubrene Single-Crystal Field-Effect Transistors with Nickel Source and Drain Electrodes
• Bias-dependent Contact Resistance in Rubrene Single-Crystal Field-Effect Transistors

Cited by in corpus (2)

• Extraction of the Schottky parameters in metal-semiconductor-metal diodes from a single current-voltage measurement
• Dipolar Switching of Charge-Injection Barriers at Electrode/Semiconductor Interfaces as a Mechanism for Water-Induced Instabilities of Organic Devices