Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$

M. Kobayashi; Y. Ishida; J. I. Hwang; G. S. Song; M. Takizawa; A. Fujimori; Y. Takeda; T. Ohkochi; T. Okane; Y. Saitoh; H. Yamagami; Amita Gupta; H. T. Cao; K. V. Rao

doi:10.1103/PhysRevB.79.205203

paper

Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In $_{2 - x}$ V $_{x}$ O $_{3}$

arXiv:0801.4244 · doi:10.1103/PhysRevB.79.205203

Abstract

The electronic structure of In $_{2 - x}$ V $_{x}$ O $_{3}$ ( $x = 0.08$ ) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2 p$ core-level PES and XAS spectra revealed trivalent electronic state of the V ion, consistent with the substitution of the V ion for the In site. The V 3d partial density of states obtained by the resonant PES technique showed a sharp peak above the O $2 p$ band. While the O $1 s$ XAS spectrum of In $_{2 - x}$ V $_{x}$ O $_{3}$ was similar to that of In $_{2}$ O $_{3}$ , there were differences in the In $3 p$ and 3d XAS spectra between V-doped and pure In $_{2}$ O $_{3}$ . The observations give clear evidence for hybridization between the In conduction band and the V 3d orbitals in In $_{2 - x}$ V $_{x}$ O $_{3}$ .

5 pages, 4 figures

Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In2−x​Vx​O3​

Abstract

References in corpus (3)

Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In $_{2 - x}$ V $_{x}$ O $_{3}$