Optical conductivity of bilayer graphene with and without an asymmetry gap

Abstract

When a bilayer of graphene is placed in a suitably configured field effect device, an asymmetry gap can be generated and the carrier concentration made different in each layer. This provides a tunable semiconducting gap, and the valence and the conductance band no longer meet at the two Dirac points of the graphene Brillouin zone. We calculate the optical conductivity of such a semiconductor with particular emphasis on the optical spectral weight redistribution brought about by changes in gap and chemical potential due to charging. We derive an algebraic formula for arbitrary value of the chemical potential for the case of the bilayer conductivity without a gap.

final accepted version for PRB, added discussion and typos fixed

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Cited by in corpus (8)

• The optical conductivity of graphene in the visible region of the spectrum
• Excitonic Effects on the Optical Response of Graphene and Bilayer Graphene
• Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
• Infrared spectroscopy of electronic bands in bilayer graphene
• Origin of Universal Optical Conductivity and Optical Stacking Sequence Identification in Multilayer Graphene
• Dirac electrons in graphene-based quantum wires and quantum dots
• Disorder-induced tail states in a gapped bilayer graphene
• Band structure asymmetry of bilayer graphene revealed by infrared spectroscopy