Tunneling Study of the Charge-Ordering Gap on the Surface of LaPrCaMnO Thin Films
arXiv:0712.1017 · doi:10.1103/PhysRevB.77.014404
Abstract
Variable temperature scanning tunneling microscopy/spectroscopy studies on (110) oriented epitaxial thin films of LaPrCaMnO are reported in the temperature range of 77 to 340 K. The films, grown on lattice matched NdGaO substrates, show a hysteretic metal-insulator transition in resistivity at 170 K. The topographic STM images show step-terrace morphology while the conductance images display a nearly homogeneous surface. The normalized conductance spectra at low temperatures (T150 K) show an energy gap of 0.5 eV while for T180 K a gap of 0.16 eV is found from the activated behavior of the zero bias conductance. The presence of energy gap and the absence of phase separation on the surface over more than 2 m2 m area contradicts the metallic behavior seen in resistivity measurements at low temperatures. We discuss the measured energy gap in terms of the stabilization of the insulating CO phase at the film surface.
arXiv comment5 pages, 5 figures To appear in Phys. Rev. B
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- Fingerprint of dynamical charge/spin correlations in the tunneling spectra of colossal magnetoresistive manganites
- Persistent metal-insulator transition at the surface of an oxygen-deficient, epitaxial manganite film
- Evidence of mobile carriers with Charge Ordering gap in Epitaxial PrCaMnO Thin Films